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Abstract

Based on the invalidation and damage of the field effect transistors under lightning radiation, we establish the breakdown experiment with open-circuit voltage wave and the protection experiment with TVS as the protection device. The junction field effect transistor and the metal oxide semiconductor field effect transistor are used as material. We draw some conclusions. In the breakdown experiment, the breakdown voltage of the MOSFETs is higher than that of the JFETs as a whole. The MOSFET can be adopted in the amplifier circuit which is expected to get higher input resistance and breakdown voltage. The drain-source resistance can recover to the original resistance value after being placed a period of time, but the gate-source resistance is irreversible. The invalidation of the device under test is due to the breakdown of gate-source. The TVS can protect the FTEs well. The change of pin resistance of the MOSFET is inconspicuous. MOSFETs are more stable for debugging and development of the amplifier circuit. The results provide some significance for the development and improvement of the lightning electric fields change measuring instruments in the future.

Keywords

Field effect transistor JFET MOSFET invalidation

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Damaged mechanism analysis of FET under lightning

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