Abstract
The detection of low-energy x rays in a precise and efficient manner is now routinely performed with a range of solid state detectors. These devices have been developed continuously over the past 30 years to the point where current performance closely matches theoretical predictions for resolution and efficiency. To achieve these goals parallel developments in field effect transistors and amplifiers were also required. To fully understand the problems associated with the development and use of these detectors it is necessary to discuss both the generation of x rays and the way in which x rays interact with the available detector materials. The energy range considered is 0-100 keV and a comparison between the successful lithium drifted silicon detector and the more recently re-developed high-purity germanium detectors for these low energy applications is given.
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