Abstract
Titanium oxinitride thin film with a thickness equal to 250 nm is obtained at 700 °C by the LP-MOCVD method. Analysis by photoelectron spectroscopy and by X-ray diffraction show that the composition of the deposit is TiN0.8O0.4 with a TiN structure. Morphological observation of the deposit, studied by scanning electron microscopy, indicated that the surface is rough with the presence of some fissures. Electrochemical study of samples in Ringer's solution (9g/l of NaCl) at 37°C, showed the role played by the surface state and imperfections on the corrosion acceleration.
References
1.
Giovanni A.
,
Battiston G. A.
,
Gerbasi R.
,
Porchia M.
, and
Marigo A.
, Thin Solid Films , 1994 , 239 , 186 .
2.
Fabreguette F.
,
Imhof L.
,
Maglione M.
,
Domenchini B.
,
Marco de Lucas M. C.
, and
Sibllot P.
, Chemical Vapor Deposition , 2000 , 3 , 6 .
3.
Bouteville A.
,
Imhoff L.
, and
Remy J. C.
, Microelectron. Eng. , 1998 , 37 , 421 .
4.
Vershini N.
,
Filonov K.
,
Straumal B.
,
Gust W.
,
Wiener I.
,
Rabkin E.
, and
Kazakevich A.
, Surface Coat. Technol. , 2000 , 125 , 229 .
5.
Valente T.
, and
Galliano F. P.
, Surface Coat. Technol. , 2000 , 127 , 86 .
6.
Brandl W.
, and
Gending C.
, Thin Solid Films , 1996 , 290-291 , 343 .
7.
Straumal B.
,
Vershinin N.
,
Filonov K.
,
Dimitriou R.
, and
Gust W.
, Thin Solid Films , 1999 , 351 , 204 .
8.
Guillot J.
,
Jouaiti A.
,
Imhoff L.
,
Domenichini B.
,
Heintz O.
,
Zerkout S.
,
Mosser A.
, and
Bourgeois S.
, Surf. Interf. Analyt , 2002 , 33 , 577 .
9.
Louw C.L.
,
Le I.
,
Strydom R.
,
van den Heever K.
, and
van Staden M. J.
, Surf. Coat. Technol. , 1991 , 49 , 348 .
10.
Le I.
,
Strydom R.
, and
Hofmann S.
Vacuum , 1990 , 41 , 1619 .
11.
Milosev I.
,
Strehblow H. H.
,
Navinsek B.
, and
Metikos-Hukovic M.
, Surf. Interf. Anal. , 1995 , 23 , 529
12.
Jouan P.Y.
,
Peignon M. C.
,
Cardinaud Ch.
, and
Lempérière G.
, Appl. Surf. Sci. , 1993 , 68 , 595 .
13.
Flis J.
, Corros. Sci. , 1979 , 19 , 151 .
14.
Smart N.R.
, and
Scott T. M.
, Corros. Sci. , 1990 , 30 , 877 .
15.
Nassif N.
, Surface Technol. , 1985 , 26 , 189 .