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Abstract

We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O₃) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH_x (x = 1–3), O_ySiH (y = 1–2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O²SiH band amplitude.

Keywords

Porous silicon Ozone Photoluminescence Infrared spectroscopy Correlation

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Link between O 2 SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O 3 Oxidation

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