The electrochemical etching of p-type silicon was carried out at different current densities using aqueous electrolytes on the same resistivity samples. The morphology of the pores, formed at different current densities and etching time, has been characterised using scanning electron microscopy. The present work is centred on the formation of islandlike structures. These structures are uniformly distributed and a possible mechanism for the formation of these structures is discussed. Photoluminescence studies on these structures revealed the microporous nature of the patterns.
