The structural properties of InxGa1−xN epilayers, deposited on (0001) AlN templates by plasma-assisted molecular beam epitaxy, were studied by transmission electron microscopy and Raman spectroscopy, as a function of growth temperature. Single phase films with high indium content and well-ordered heteroepitaxial interfaces were attained at lower temperatures. Delayed plastic relaxation resulted in the structural stratification of high-temperature films due to the compositional pulling. Such films relaxed by a stacking fault mechanism, contrary to low temperature ones that exhibited relaxation by misfit dislocations. Despite the higher defect content of the former, their phonon mean free path was also higher, showing that alloying-induced fluctuations of the periodic potential constitute a more critical parameter. Cubic interfacial zones were suppressed at lower growth temperatures.
This is part of a thematic issue on Nanoscale Materials Characterisation and Modeling by Advances Microscopy Methods - EUROMAT.
JaniO, FergusonI, HonsbergC, Design and characterization of GaN/InGaN solar cells. Appl Phys Lett. 2007;91:132117. doi: 10.1063/1.2793180
2.
YamamotoA, KodamaK, Tanvit HasanM, A comparative study on metalorganic vapor phase epitaxial InGaN with intermediate in compositions grown on GaN/sapphire template and AlN/Si(111) substrate. Jpn J Appl Phys. 2015;54:08KA12. doi: 10.7567/JJAP.54.08KA12
3.
KazazisSA, PapadomanolakiE, IliopoulosE.Polarization-engineered InGaN/GaN solar cells: realistic expectations for single heterojunctions. IEEE J Photov. 2018;8:118–124. doi: 10.1109/JPHOTOV.2017.2775164
4.
HoI-H, StringfellowGB.Solid phase immiscibility in GaInN. Appl Phys Lett. 1996;69:2701–2703. doi: 10.1063/1.117683
5.
DoppalapudiD, BasuSN, LudwigKF, Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy. J Appl Phys. 1998;84:1389–1395. doi: 10.1063/1.368251
6.
PonceFA, SrinivasanS, BellA, Microstructure and electronic properties of InGaN alloys. Phys Status Solidi B. 2003;240:273–284. doi: 10.1002/pssb.200303527
7.
EgawaT, OhmuraH, IshikawaH, Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition. Appl Phys Lett. 2002;81:292–294. doi: 10.1063/1.1492857
8.
GherasoiuI, YuKM, ReichertzLA, High quality InxGa1–xN thin films with x>0.2 grown on silicon. Phys Status Solidi B. 2010;247:1747–1749. doi: 10.1002/pssb.200983462
9.
BhuiyanAG, MiharaA, EsakiT, MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content. Phys Status Solidi C. 2012;9:670–672. doi: 10.1002/pssc.201100355
10.
MathewM, SodabanaluH, SugiyamaM, Orange/yellow InGaN/AlN nanodisk light emitting diodes. Phys Status Solidi C. 2013;10:1525–1528. doi: 10.1002/pssc.201300258
11.
SangL, LiaoM, IkedaN, Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer. Appl Phys Lett. 2011;99:161109. doi: 10.1063/1.3654155
12.
SangL, LiaoM, KoideY, InGaN-based thin film solar cells: epitaxy, structural design, and photovoltaic properties. J Appl Phys. 2015;117:105706. doi: 10.1063/1.4914908
13.
AnazawaK, HassanetS, FujiiK, Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE. J Cryst Growth. 2013;370:82–86. doi: 10.1016/j.jcrysgro.2012.08.050
14.
LaboutinO, CaoY, JohnsonW, InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition. Appl Phys Lett. 2012;100:121909. doi: 10.1063/1.3697415
15.
WoodwardJM, NikiforovAY, LudwigKF, Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy. J Appl Phys. 2017;122:065305. doi: 10.1063/1.4986272
16.
BaziotiC, PapadomanolakiE, KehagiasT, Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy. J Appl Phys. 2015;118:155301. doi: 10.1063/1.4933276
17.
Liliental-WeberZ, ZakharovDN, YuKM, Compositional modulation in InxGa1-x
N. Physica B. 2006;376-377:468–472. doi: 10.1016/j.physb.2005.12.120
18.
Liliental-WeberZ, ZakharovDN, YuKM, Compositional modulation in InxGa1–x
N:TEM and X-ray studies. J Electron Microscopy. 2005;54:243–250.
19.
TrybusE, JaniO, BurnhamS, Characteristics of InGaN designed for photovoltaic applications. Phys Status Solidi C. 2008;5:1843–1845. doi: 10.1002/pssc.200778693
20.
YamamotoA, Tanvit HasanM, MiharaA, Phase separation of thick (∼1 µm) InxGa1–x
N (x ∼ 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN. Appl Phys Express. 2014;7:035502. doi: 10.7567/APEX.7.035502
21.
KarpovSY.Suppression of phase separation in InGaN due to elastic strain. MRS Internet J Nitride Semicond Res. 1998;3:16. doi: 10.1557/S1092578300000880
22.
PapadomanolakiE, BaziotiC, KazazisSA, Molecular beam epitaxy of thick InGaN (0001) films: effects of substrate temperature on structural and electronic properties. J Cryst Growth. 2016;437:20–25. doi: 10.1016/j.jcrysgro.2015.12.012
23.
KomninouP, KioseoglouJ, DimitrakopulosGP, Partial dislocations in wurtzite GaN. Phys Status Solidi A. 2005;202:2888–2899. doi: 10.1002/pssa.200521263
24.
KioseoglouJ, DimitrakopulosGP, KomninouP, Analysis of partial dislocations in wurtzite GaN using gradient elasticity. Phys Status Solidi A. 2006;203:2161–2166. doi: 10.1002/pssa.200566018
25.
Smalc-KoziorowskaJ, BaziotiC, AlbrechtM, Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures. Appl Phys Lett. 2016;108:051901. doi: 10.1063/1.4940745
26.
IliopoulosE, GeorgakilasA, DimakisE, InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy. Phys Status Solidi A. 2006;203:102–105. doi: 10.1002/pssa.200563509
27.
HÿtchMJ, SnoeckE, KilaasR.Quantitative measurement of displacement and strain fields from HREM micrographs. Ultramicroscopy. 1998;74:131–146. doi: 10.1016/S0304-3991(98)00035-7
28.
MoralesFM, GonzálezD, LozanoJG, Determination of the composition of InxGa1-x
N from strain measurements. Acta Mater. 2009;57:5681–5692. doi: 10.1016/j.actamat.2009.07.063
29.
DimitrakopulosGP, KehagiasT, AjagunnaA, Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer. Phys Status Solidi A. 2010;207:1074–1078. doi: 10.1002/pssa.200983103
30.
DimitrakopulosGP, KalesakiE, KomninouP, Strain accommodation and interfacial structure of AlN interlayers in GaN. Cryst Res Technol. 2009;44:1170–1180. doi: 10.1002/crat.200900480
31.
KioseoglouJ, KalesakiE, LymperakisL, Polar AlN/GaN interfaces: structures and energetics. Phys Status Solidi A. 2009;206:1892–1897. doi: 10.1002/pssa.200881436
32.
GrilleH, SchnittlerC, BechstedtF.Phonons in ternary group-III nitride alloys. Phys Rev B. 2000;61:6091–6105. doi: 10.1103/PhysRevB.61.6091
33.
HernandezS, CuscoR, PastorD, Raman-scattering study of the InGaN alloy over the whole composition range. J Appl Phys. 2005;98:013511. doi: 10.1063/1.1940139
34.
GkranaV, FilintoglouK, ArvanitidisJ, Raman and photoluminescence mapping of InxGa1-x
N (x ∼ 0.4) at high pressure: optical determination of composition and stress. Appl. Phys. Lett. 2014;105:092107. doi: 10.1063/1.4895023
35.
DavydovVY, KlochikhinAA, GoncharukIN, Resonant Raman scattering in InGaN alloys. Phys Status Solidi B. 2006;243:1494–1498. doi: 10.1002/pssb.200565350
36.
ParayanthalP, PollakFH.Raman scattering in alloy semiconductors: ‘spatial correlation’ model. Phys Rev Lett. 1984;52:1822–1825. doi: 10.1103/PhysRevLett.52.1822
37.
BergmanL, BremserMD, PerryWG, Raman analysis of the configurational disorder in AlxGa1-x
N films. Appl Phys Lett. 1997;71:2157–2159. doi: 10.1063/1.119367
38.
KatsikiniM, ArvanitidisJ, ChristofilosD, Raman scattering of InxAl1-xN alloys with 0.2 < x < 0.9. Phys Status Solidi C. 2010;7:76–79. doi: 10.1002/pssc.200982607
