Grazing incidence synchrotron X-ray topography as a tool for denuded zone studies of silicon wafers

Abstract

Reflection topographs of annealed Czochralski-grown silicon wafers are made with synchrotron white beam radiation at grazing angles of 0.2 degree to 3 degree. Information on the uniformity of the denuded zone is obtained from a number of grazing incidence topographs, which according to calculations turn out to be almost completely monochromatic having a negligible harmonic content. The calculated penetration depth ranges from 1 to 100 µm depending on the grazing angle and reflection used. The grazing incidence topographs are compared with section topographs of the same samples.