Abstract
An efficient layout-level optimization technique based on NN+TLBO algorithm is presented to maximize the quality factor of on-chip spiral inductors at a given frequency. A multi-layer artificial neural network (ANN) is developed to model the on-chip inductors. TLBO algorithm is used in order to optimize the layout space for the on-chip spiral inductors considering constraints of design specifications and desired accuracy level. A four-way K-band lumped-element power divider (PD) is designed in 0.18μm CMOS technology to validate the characterized spiral inductor. The PD achieves an insertion loss less than 2.1 dB, an input return loss better than 10 dB, an output return loss less than 12 dB, and a port-to-port isolation higher than 14 dB from 18 to 26 GHz (K-Band). The chip area is about 0.415 mm2 including bonding pads.
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