We will demonstrate that our micro-FT-IR mapping system is highly effective for investigating the behavior of interstitial oxygen (Oi) in Czochralski-grown silicon single crystals. The micro-FT-IR system experiences high space resolution, and Oi striations of as-grown silicon single crystals or of oxygen micro-precipitation after a thermal treatment are quantitatively measured. Oi micro-distribution profiles of as-grown crystals exhibit regular or irregular intervals and height, depending upon their crystal growth conditions. Oxygen micro-precipitations along growth striations are dependent upon their initial Oi micro-distribution profiles, and anomalous oxygen micro-precipitation is not observed.
