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References
1.
The single crystal silicon was characterized as float zone, 111 orientation, phosphorus-doped N -type with resistivity >300 Ω cm.
2.
Harrick
N. J.
, Internal Reflection Spectroscopy (Wiley—Inter-science, Inc. , New York , 1967 ), Chap.2.
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Randall
C. M.
and
Fawcliffe
R. D.
, Appl. Opt. 6 , 1889 (1967 ).