Hysteresis,structural and composition characteristics of deposited thin films by reactively sputtered titanium target in Ar/CH 4 /N 2 gas mixture

Abstract

Hysteresis, crystal structure and chemical composition of thin films deposited through reactive sputtering of titanium metal target in Ar/CH₄/N₂ gas mixture have been investigated. The transition from metallic to compound sputtering mode was clearly seen as the reactive gases (CH₄ and N₂) flowrate concentration first increased and subsequently decreased. Abrupt cathode current drop from 273 mA to reach a minimum value of 195 mA was observed upon addition of nitrogen gas from 0 to 10 flowrate concentration to the Ar/CH₄ gas mixture. This was also accompanied by an abrupt change in reactive gas partial pressure. Exploration of the deposition rate and film thickness showed that it decreased from 4·5 to 1·5 nm min⁻¹ and from 140 to 40 nm as the N₂ flowrate concentration increased from 1·5 to 7·5 at 5·5CH₄ flowrate concentration respectively. X-ray diffraction and X-ray photoelectron spectroscopy analyses of the deposited films confirmed the formation of titanium carbide and carbonitride phases as the methane and nitrogen gas concentrations in the sputtering gas were increased.