Interfacial reactions of sequentially electroplated Au/Sn/Au films on Si chips

Abstract

Au−30 at-Sn eutectic alloy was fabricated by sequentially pulse electroplating Au and Sn films on Si chips. Three kinds of Au/Sn/Au triple layer films were prepared in the present work: Au/Sn/Au (6/6/1 μm) films, Au/Sn/Au (6/6/6 μm) films and Au/Sn/Au (8/6/1 μm) films. The microstructure and phase transformation in Au/Sn/Au films during aging and reflow soldering were investigated. For Au/Sn/Au (6/6/1 μm) films during aging at 100 and 150°C, the layered AuSn/AuSn₂/AuSn₄ structure formed in the reaction region. Furthermore, the Sn film was completely consumed, and AuSn₄ finally transformed into AuSn and AuSn₂ after aging at 150°C for 15 h. For Au/Sn/Au (6/6/6 μm) films during aging at 150°C, the electroplating sequence had an important effect on the formation of Au−Sn phases. An Au₅Sn layer was present at the Au II/Sn interface but not at the Au I/Sn interface. For Au/Sn/Au (8/6/1 μm) films, the micropores that formed preferentially along the Au₅Sn/AuSn interface remarkably decreased with increasing reflow temperature from 280 to 310°C. After reflowing for 10 s, the microstructure was not an Au−Sn eutectic; however, after reflowing for 60 s, coarsened primary Au₅Sn phase and typical Au−30 at-Sn eutectic microstructure of fine eutectic phases (AuSn+Au₅Sn) formed.