Preparation of NiO x thin films on SnO 2 : F for electrochromic applications

Abstract

By combining the electrochemical and sol–gel deposition methods it was possible to prepare the heterojunction NiO_x -SnO₂ : F. High quality SnO₂ : F thin films were prepared by the sol–gel technique on glass substrates. These films are very transparent in the visible region, with optical transmittance >85%, and have conductivity around 230 Ω_-1 cm_-1. By using electrochemical deposition it was possible to grow NiO_x thin films on SnO₂ : F coated glass substrates. Optical and electrical properties of the NiO_x -SnO₂ : F interface are detailed in the present study. Cyclic voltammetry measurements of NiO_x thin films deposited on SnO₂ : F show clearly the reversible movement of electrons, protons, and positive ions into the electrochromic NiO_x film. With such results, the NiO_x -SnO₂ : F interface shows potential for application in electrochromic devices.