Lead zirconate titanate (PZT) thin films doped with C60 were fabricated on Pt/Ti/SiO2 /Si substrates at 400–500°C, using solutions prepared by the sol–gel method. Formation of pyrochlore was suppressed, and 〈001〉 preferential orientation of perovskite phase was developed by adding C60 dissolved in toluene. The perovskite formation temperature was also markedly lowered by using the toluene solution of C60 .
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