We present a (2+1)-dimensional partial differential equation model for spatial–lateral dynamics of edge-emitting broad-area semiconductor devices and several extensions of this model describing different physical effects. MPI-based parallelization of the resulting middle-size numerical problem is implemented and tested on the blade cluster and separate multi-core computers at the Weierstrass Institute in Berlin. It was found that an application of 25–30 parallel processes on all considered platforms guaranteed a nearly optimal performance of the algorithm with a speedup of around 20–25 and an efficiency of 0.7–0.8. It was also shown that simultaneous usage of several in-house available multi-core computers allows for a further increase of the speedup without a significant loss of efficiency. Finally, the importance of the considered problem and efficient numerical simulations of this problem were illustrated via a few examples occurring in real world applications.
BandelowURadziunasMSieberJ. (2001) Impact of gain dispersion on the spatio-temporal dynamics of multisection lasers. IEEE Journal of Quantum Electronics37: 183–188.
3.
BawamiaAEppichBPaschkeK. (2009) Experimental determination of the thermal lens parameters in a broad area semiconductor laser amplifier. Applied Physics B: Lasers and Optice97: 95–101.
4.
BöhringerKHessO (2008) A full-time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation. Progress in Quantum Electronics32(5-6): 159–246.
5.
BurkhardTZieglerMFischerI. (1999) Spatio-temporal dynamics of broad area semiconductor lasers and its characterization. Chaos, Solitons, & Fractals10: 845–850.
6.
ČiegisRRadziunasM (2010) Effective numerical integration of traveling wave model for edge-emitting broad-area semiconductor lasers and amplifiers. Mathematical Modelling and Analysis15: 409–430.
7.
ČiegisRRadziunasMLichtnerM (2008) Numerical algorithms for simulation of multisection lasers by using traveling wave model. Mathematical Modelling and Analysis13: 327–348.
8.
ChazanPMayorJMorgottS. (1998) High-power near difraction-limited tapered amplifiers at 1064 nm for optical intersatelite communications. IEEE Photonics Technology Letters10(11): 1542–1544.
9.
JechowALichtnerMMenzelR. (2009) Stripe-array diode-laser in an off-axis external cavity: Theory and experiment. Optics Express17: 19599–19604.
10.
LimJSujeckiSLangL. (2009) Design and simulation of next-generation high-power, high-brightness laser diodes. IEEE Journal of Selected Topics in Quantum Electronics15(3): 993–1008.
11.
MaiwaldMSchwertfegerSGütherR. (2006) 600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO3. Optics Letters31(6): 802–804.
12.
Perez-SerranoAJavaloyesJBalleS (2013) Spectral delay algebraic equation approach to broad area laser diodes. IEEE Journal of Selected Topics in Quantum Electronics19(5): 1502808.
PimenovATronciuVBandelowU. (2013) Dynamical regimes of a multistripe laser array with external off-axis feedback. Journal of the Optical Society of America B30: 1606.
15.
RadziunasM (2016) Modeling and simulations of edge-emitting broad-area semiconductor lasers and amplifiers. In: Parallel processing and applied mathematics: 11th international conference, PPAM 2015. Revised selected papers, Part II (Lecture Notes in Computer Science, volume 9574) (eds WyrzykowskiRDeelmanEDongarraJ.), Krakow, Poland, September 6–9, 2015. Berlin: Springer, pp.269–276.
RadziunasMHerreroRBoteyM. (2015) Far field narrowing in spatially modulated broad area edge-emitting semiconductor amplifiers. Journal of the Optical Society of America B32: 993–1000.
18.
RadziunasMTronciuVBandelowU. (2008) Mode transitions in distributed-feedback tapered master-oscillator power-amplifier. Optical and Quantum Electronics40: 1103–1109.
19.
RadziunasMČiegisR (2014) Effective numerical algorithm for simulations of beam stabilization in broad area semiconductor lasers and amplifiers. Mathematical Modelling and Analysis19: 627–646.
20.
SchultzWPopraweR (2000) Manufacturing with nover high-power diode lasers. IEEE Journal of Selected Topics in Quantum Electronics6(4): 696–705.
21.
SpreemannMLichtnerMRadziunasM. (2009) Measurement and simulation of distributed-feedback tapered master-oscillators power-amplifiers. IEEE Journal of Quantum Electronics45: 609–616.
22.
TijeroJBorruelLVileraM. (2014) Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 μm. In: PanajotovKSciamannaMValleAMichalzikR (eds) Semiconductor lasers and laser dynamics VI, Proceedings of SPIE, volume 9134. Brussels, Belgium: SPIE, p. 91342A.
23.
TronciuVLichtnerMRadziunasM. (2009) Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers. Optics and Quantum Electronics41: 531–537.
24.
WenzelH (2013) Basic aspects of high-power semiconductor laser simulation. IEEE Journal of Selected Topics in Quantum Electronics19(5): 1–13.
25.
ZinkCJechowAHeuerA. (2014) Multi-wavelength operation of a single broad area diode laser by spectral beam combining. IEEE Photonics Technology Letters26(3): 253–256.
