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Abstract

The microresonant pressure sensor with docks has a relatively high sensitivity. However, the sensitivity calculation of the microresonant pressure sensor is approximate and independent on the film pressure. Here, the dynamic equations of the microresonant beam with docks are deduced and its equations of the natural frequency are given. The relationship between microbeam stress and dock width of the sensor is determined. The sensitivity of the sensor to film pressure is investigated. The results show that the sensitivity of the microsensor to pressure changes with film pressure, and the sensitivity is large for relatively small film pressure. The system parameters such as length and thickness of the beam, length and thickness of the pressure film, and dock width have effects on the sensitivity of the microsensor to pressure. The film thickness has the most obvious effects on the sensitivity. These results are useful for the analysis and design of the operating behavior of the sensor.

Keywords

Sensor resonant beam natural frequency sensitivity

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References

Greenwood

Satchell

. Miniature silicon resonant pressure sensor. IEE Proc Control Theory Appl 1988; 135(5): 369–372.

Offereins

Sandmaier

Folkmer

. Stress free assembly technique for a silicon based pressure sensorDigest of technical papers, TRANSDUCERS’91, the 1991 international conference on solid-state sensors and actuators. 24–27 June 1991. San Francisco, CA, USA. 986–989.

Lammerink

TSJ

Elwespoek

Van Ouwerkerk

. Performance of thermally excited resonators. Sens Actuators A 1990; 21(1–3): 352–356.

Donzier

Lefort

Spirkovich

. Integrated magnetic field sensor. Sens Actuators A 1991; 26(1–3): 357–361.

Petersen

Pourahmadi

Brown

. Resonant beam pressure sensor fabricated with silicon fusion bondingProceedings of transducers ‘91, the 1991 international conference on solid-state sensors and actuators. 24–27 June 1991. San Francisco, CA, USA. 177–180.

Yoshida

Kudo

Miyazaki

. Strain sensitive resonant gate transistorProceedings of the IEEE microelectro mechanical systems conference. 29 January to 2 February 1995. Amsterdam, Netherlands. 316–321.

Devoe DL and Pisano AP. A fully surface-micromachined piezoelectric accelerometer. In: The 1997 international conference on solid-state sensors and actuators, Chicago, IL, 16–19 June 1997, pp.1205–1208.

Pinnaduwage LA, Hedden DL and Gehl A. A sensitive, handheld vapor sensor based on microcantilevers. Review of Scientific Instruments 2004; 75(11): 4554--4557.

Lin

Zhao

. Dynamic behavior of nanoscale electrostatic actuators. Chin Phys Lett 2003; 20(12): 2070–2073.

10.

Ramezani

Alasty

Akbari

. Closed-form solutions of the pull-in instability in nano-cantilevers under electrostatic and intermolecular surface forces. Int J Solids Struct 2007; 44(14–15): 4925–4941.

11.

Batra

Porfiri

Spinello

. Vibrations and pull-in instabilities of microelectromechanical von Karman elliptic plates incorporating the Casimir force. J Sound Vib 2008; 315(4–5): 939–960.

12.

Kinnell

Ward

MCL

Craddock

. Physical characterisation of selective stress coupling for resonant pressure sensors. Sens Actuators A 2004; 115(2–3): 230–234.

13.

Chen

Liu

. Design and experiment of a laterally driven micromachined resonant pressure sensor for barometers. Procedia Eng 2010; 5: 1490–1493.

14.

Chen

Cui

Wang

. A novel resonator structure for pressure sensorsPacific rim workshop on transducers and micro/nano technologies. 22–24 July 2002. Xiamen, China.

15.

Chen

Cui

Gao

. A resonant beam pressure sensor with a peninsular structure. Micronanoelectronics 2003; 7–8: 464–466. in China).

16.

Liu

Xiong

. Sensitivity analysis and simulation of microfabricated resonant beam pressure sensor on silicon island structure. Comput Simul 2008; 25(8): 317–321. in China).

Sensitivity for a microresonant beam pressure sensor with docks

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