In this study, we synthesized aluminum-doped reduced graphene oxide (Al-rGO) materials with varying Al concentrations (0%, 6%, 8%, and 12%) and evaluated their structural properties. Comprehensive characterization was performed using techniques such as Energy Dispersive X-ray (EDX) mapping, Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM), and Atomic Force Microscopy (AFM). XRD analysis confirmed minor shifts in diffraction peaks, indicating that the r-GO crystal structure was preserved with localized changes due to doping. Raman spectroscopy further validated the integrity of C-C bonds in the graphene oxide structure. SEM analysis revealed uniform deposition of thin films with thicknesses between 110–120 nm, while AFM indicated a significant increase in surface roughness, from 13 nm to 112 nm, with increasing Al concentrations. The changes in surface roughness and crystallinity offer insights into the material's potential for enhancing charge transport properties.
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