The group 13 monoalkoxometallanes
[Me
$_{2}$
Ga(OC(CH
$_{3})_{2}$
CH
$_{2}$
OMe)]
$_{2}$
(1) and
[Me
$_{2}$
In(OCH(CH
$_{3}$
)CH
$_{2}$
OMe)]
$_{2}$
(2), incorporating donor functionalised alkoxides, were synthesised from the
reaction of GaMe
$_{3}$
or InMe
$_{3}$
with ROH
(R=C(CH
$_{3})_{2}$
CH
$_{2}$
OMe (1);
R=CH(CH
$_{3}$
)CH
$_{2}$
OMe (2)) in toluene.
X-ray crystallography showed that both compounds adopt dimeric structures with
a planar M
$_{2}$
O
$_{2}$
ring, and each group
13 atom is coordinated in a distorted trigonal bipyramidal geometry. The AACVD
reaction of GaMe
$_{3}$
and ROH (R
=C(CH
$_{3})_{2}$
CH
$_{2}$
OMe,
CH
$_{2}$
CH
$_{2}$
OMe,
CH
$_{2}$
CH
$_{2}$
NMe
$_{2}$
)
resulted in the formation of thin films of
Ga
$_{2}$
O
$_{3}$
on glass substrates at
450°C. The gallium oxide films were analyzed by scanning electron
microscopy, X-ray powder diffraction, energy dispersive analysis of X-rays,
wavelength dispersive analysis of X-rays and X-ray photoelectron spectroscopy.
This CVD technique offers a rapid, convenient route to
Ga
$_{2}$
O
$_{3}$
, which involves the in situ
formation of dimethylgallium alkoxides, of the type
[Me
$_{2}$
Ga(μ-OR)]
$_{2}$
similar to
compound 1.
