In order to quantitatively compute the magnetic field and current distributions in an Insulated Gate Bipolar Transistor (IGBT) considering the displacement currents and 3D eddy current neighboring effect to the lead in the fast switching-on and –off transients, a coupled distribute circuit-three dimensional (3D) finite element method (FEM) is developed, and its accuracy and merits are validated by comparing the numerical and tested results on a case study.
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