Abstract
CuInSe2 (CIS) thin films on glass substrates were successfully grown by the metal organic chemical vapour deposition method by using three precursors [Cu-precursor, trimethyl-indium (TMI) and hydrogen selenide (H2Se)]. The flow rates of TMI and H2Se can be adjusted independently to gain different lll/VI ratios, which is different from the single-precursor technique. Good chalcopyrite phase from CIS films was demonstrated by X-ray diffraction. The optical band gap of CIS thin films can be adjusted by controlling the growth conditions.
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