The microline focus spectrometer (MiFS) Raman imaging process is described and is used to investigate stress and structure defect patterns in micro-indented single-crystal silicon. Raman intensity, frequency, and bandwidth images are reported with 0.3-μm pixel resolution, which reveal residual compressive stress distributions around the indentation site and areas of tensile stress at the crack tips. A previously unreported annular structural defect region, remote from the indent site, is observed in images where the indenter tip edges are aligned with the 110 direction of the silicon crystal.
