Abstract
Phosphosilicate glass (PSG) is widely used in the microelectronics industry as a dielectric thin film. Determination of phosphorus concentration in these films is important for quality control. Data are presented here indicating that infrared emission spectroscopy combined with multivariate calibration can produce concentration determinations with a precision comparable to that of the electron microprobe reference method. Partial least-squares multivariate calibration methods applied to infrared emission spectra of twelve calibration standards of PSG films on silicon wafers at 225°C yielded a cross-validated standard error of prediction of 0.11 wt % P. It was found that the precisions of the phosphorus determinations were comparable for the use of absorbance spectra, single-beam emission spectra, or single-beam emission spectra ratioed to a blackbody at the same temperature.
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