Abstract
Multiple passes, both within a semiconductor specimen and between the specimen surface and the interferometer, give rise to a series of extraneous “tertiary” interferograms in a Fourier transform spectrophotometer. These tertiary interferograms can lead to a possible error on the order of 1% in the measurement of the impurity content of a silicon wafer. However, this effect can be eliminated by a straightforward manipulation of the interferogram prior to transformation.
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