Abstract
The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO2 is etched with a CF3H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.
Keywords
Get full access to this article
View all access options for this article.
References
1.
Frieser
R. G.
Horwath
R. S.
, and
Bondur
J. A.
, Proc. 7th Int. Vac. Congr. and 3rd Int. Conf. Solid State (Vienna) 2 , 1253-c (1977 ).
2.
Brown
H. L.
Bunyard
G. B.
, and
Lin
K. C.
, Solid State Technol. 21 (7 ), 35 (1978 ).
3.
Harshbarger
W. R.
Porter
R. A.
Hiller
T. A.
, and
Horton
P.
, Appl. Spectrosc. 31 , 201 (1977 ).
4.
Degenkolb
E. O.
and
Griffiths
J. E.
, Appl. Spectrosc. 31 , 40 (1977 ).
5.
Mogab
C. J.
, Electrochemical Society Meeting (October 1977 ), Abstract No. 146.
6.
Poulsen
R. G.
, J. Vac. Sci. Technol. 14 , 266 (1977 ).
7.
Bondur
J. A.
, J. Vac. Sci. Technol. 13 , 1023 (1976 ).
8.
Bondur
J. A.
Case
W. R.
, and
Clark
H. A.
, Electrochemical Society Meeting (May 1978 ), Abstracts 303 and 304.
9.
Harrison
G. R.
, MIT Wavelength Tables (MIT Press , Cambridge, MA , 1969 ).
10.
Pearse
R. W. B.
and
Gaydon
A. G.
, The Identification of Molecular Spectra (Chapman and Hall , London , 1963 ).
11.
Striganov
A. R.
and
Sventitskii
N. S.
, Tables of Spectral Lines of Neutral and Ionized Atoms (IFI/Plenum Press , New York , 1968 ).