An infrared absorption method in the 1- to 15-µ range has been developed for determining HF, HCl, HCF3, and SiF4 in WF6, gas. Because of the reactivity and corrosiveness of WF6, a special gas absorption cell and gas-sampling apparatus were designed and built. Calibration curves were generated for a 10-cm cell. Sensitivity values were 100 wppm for HF and HCl, and 10 wppm for HCF3 and SiF4.
HuegelF. J.FungE.ChengH., and HolmanW. R., “Effects of Additives on the Deposition Rate of CVD Tungsten,” in Proceedings of the Third International Conference on Chemical Vapor Deposition, GlaskiF. A., Ed. (Salt Lake City, Utah, 1972), p. 145.
2.
ChinJ.WeinbergA. F., and LindgrenJ. R., “Effects of Additives of Non-metallics on the Properties of Vapor-Deposited Tungsten,” General Dynamics, General Atomic Division Report GA-7324, 1966.
3.
AubeauR.BlandenetG., and BrogniartG., Anal. Chem.44, 1628 (1972).
4.
VodarB., Proc. Roy. Soc. (London), Ser. A, Math. Phys. Sci.255, 44 (1960).
