Characteristics of CdO—Si heterostructure produced by plasma-induced bonding technique

Abstract

In the current work, the characteristics of the CdO—Si structure produced by plasma-induced bonding technique were studied. The produced structure was an asymmetric heterojunction consisting of n-type cadmium oxide (CdO) on a p-type silicon substrate. The Si substrate and CdO sample were bonded by subjecting them to the plasma formed between two electrodes. The measurements included the structural and electrical characteristics. The built-in potential of the produced heterojunction is about 0.9 eV with typical spectral responsivity within the range 300–900 nm. With dark current of 50 µA, maximum reverse bias current of 180 µA and ideality factor of 1.18, the results explained better characteristics than those of the same heterojunction produced by thermal evaporation technique.