Some new ideas on diffusion modelling under ion bombardment heat treatment conditions are presented. The model put forward may explain why ion bombardment treatment times can be much shorter than those for conventional processes. Some of the problems are discussed, such as the influence of ion bombardment on treated surface structure and vacancy diffusion.
XUZHONG, WANGZ. M., FANB. H., and SHUNM. C.: J. Taiyuan Univ. Technol., 1981, (1).
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XUZHONG, GUF. Y., WANGZ. M., PANJ. D., ZHENGW. N., HANT. H., and FANB. H.: Proc. 4th Int. Cong. on ‘Heat treatment of materials’, Berlin, June1985, International Federation for the Heat Treatment of Materials, Vol. 2, 785–808.
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XUZHONG: US Patent 4,520,268, 28 May1985.
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GUF. H., XUZ., WANGZ. M., FANB. H., and PANJ. D.: Heat Treat. Met. (China), 1985, (4), 39–44.
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GUF. Y., XUZHONG, and WANGC. Z.: Proc. 8th Int. Symp. on ‘Plasma chemistry’, Tokyo, August1987, Tokyo University.
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XUZHONG, FANB. H., PANJ. D., and ZHENGW. N.: Heat Treat. Met. (China), 1985, (5).
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BROWNA. M. and ASHBYM. F.: Ada Metal!., 1980, 28, 1085.
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