This paper has two objectives. One is to review some of the essential features of the sputtering process. The second is to discuss several recent developments relating to the use of reactive sputtering for the deposition of oxide and semiconductor compounds and to the use of controlled substrate ion bombardment for the purpose of modifying coating properties. The particular topics include: (i) a magnetic field configuration that facilitates controlled substrate ion bombardment in planar magnetron sources; (ii) the use of baffelled targets and substrate ion bombardment for improving composition control during the reactive sputter deposition of metal oxides; (iii) the use of substrate temperature to assist in controlling the stoichiometry of semiconducting CuInSe2 coatings deposited by reactive cosputtering; and (iv) the use of ion bombardment to neutralize surface reactions and permit metastable single crystal compound semiconductors to be deposited.
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References
1.
THORNTONJ. A.: in ‘Deposition technologies for films and coatings’, (ed. BunshahR. F.et al.), 170; 1982, Park Ridge, NJ, Noyes.
2.
SHAWB. J. and MILLERR. P.: US Patent 3,918,100, 11 November1975.
3.
HARPERJ. M. E. and CUOMOJ. J.: J. Vac. Sci. Technol., 1982, 21, 737.
4.
VOSSENJ. L. and CUOMOJ. J.: in ‘Thin film processes’, (ed. VossenJ. L. and KernW.), 11-73; 1978, New York, Academic Press.
5.
THORNTONJ. A.: in ‘Semiconductor materials and processing technologies’, (ed. McGuireG. E.); 1986, Park Ridge, NJ, Noyes.
6.
GREENEJ. E. and BARNETTS. A.: J. Vac. Sci. Technol., 1982, 2, 285.
7.
THORNTONJ. A. and PENFOLDA. S.: in ‘Thin film processes’, (ed. VossenJ. L. and KernW.), 75–113; 1978, New York, Academic Press.
8.
THORNTONJ. A.: Thin Solid Films, 1981, 80, 1.
9.
THORNTONJ. A.: Thin Solid Films, 1978, 54, 23.
10.
THORNTONJ. A. and LAMBJ. L.: Thin Solid Films, 1984, 119, 87.
11.
WINDOWB. and SAVVIDESN.: J. Vac. Sci. Technol., 1986, A4, 196.
12.
WAITSR. K.: in ‘Thin film processes’, (ed. VossenJ. L. and KernW.), 131; 1978, New York, Academic Press.
13.
moiorroNJ. A.: J. Vac. Sci. Technol., 1978, 15, 171.
THORNTONJ. A. and LAMBJ. L.: Final Report, US Department of Energy Contract DE—AC04-80AL-13116, Telic Corp., Santa Monica, Cal., Report TELIC 82-3, December 1982; available fromNational Technical Information Service, US Department of Commerce, Springfield, Va.
26.
GUNTHERA. G.: in ‘The use of thin films in physical investigations’, (ed. AndersonJ. C.), 213; 1966, New York, Academic Press.
27.
FRELLERH. and GUNTHERK. G.: Thin Solid Films, 1982, 88, 291.
28.
THORNTONJ. A., CORNOGD. G., and ANDERSONW. W.: J. Vac. Sci. Technol., 1981, 18, 199.
29.
BUBER. H.: ‘Electronic properties of crystalline solids’, 310; 1974, New York, Academic Press.
30.
WANGS.: ‘Solid state electronics’, 178; 1966, New York, McGraw-Hill.
31.
THORNTONJ. A., CORNOGD. G., HALLR. B., SHEAS. P., and MEAKINJ. D.: J. Vac. Sci. Technol., 1984, A2, 307.
32.
THORNTONJ. A. and LOMMASSONT. I.: Solar Cells, 1986, 16, 165.
33.
PALATNIKL. S. and RUGACHEVAE. I.: Soy. Phys. Dokl., 1967, 12, 503.
34.
GORYUNOVAN. A.: ‘The chemistry of diamond-like semi-conductors’, (translated Scripta Technica Inc., ed. AndersonJ. C.); 1965, Cambridge, Mass., MIT Press.
35.
BURNETTA. F.: MS thesis, University of Illinois, May1986.
36.
THORNTONJ. A., LOMMASSONT. C., and BURNETTA. F.: Annual Technical Progress Report, SERI Contract XL-5-04131-1, University of Illinois, Coordinated Science Laboratory, Urbana, Ill., 1986.
37.
HARPERJ. M. E., CUOMOJ. J., and HENTZELLH. T. G.: Appl. Phys. Lett., 1983, 43, 546.
38.
SHAHS. I. U.: PhD dissertation, University of Illinois at Urbana-Champaign, January1986.
39.
SHAHS. I., KRAMERB., BARNETTS. A., and GREENEJ. E.: J. Appl. Phys., 1986, 59, 1482.
40.
ZILKOJ. L. and GREENEJ. E.: J. Appl. Phys., 1980, 51, 1549.
