THE NITRIDING OF SILICON POWDER COMPACTS *

Abstract

The reaction-bonding process to prepare silicon nitride by nitriding silicon compacts was studied, and an examination made of the influence of raw material and process variables on the properties of the resulting silicon nitride. The silicon powder grain size and the impurities content were considered as powder variables, and the green density and thermal cycles as process parameters. The examination of green-density effects indicates that, under the experimental conditions, the gas permeation of nitrogen through the silicon compacts was the rate-determining step of the reaction-bonding process. Regarding the effect of nitriding temperature, the final conversion, Si to Si₃N₄, is an increasing function of the temperature in the range 1300–1400°C. As to the composition of silicon nitride obtained, α-phase formation is favoured when oxygen is present as an impurity in silicon powder. Finally, physical, chemical, and thermomechanical tests showed that reaction-bonded silicon nitride has good bending strength (21 kgf/mm²) and can be used in very severe conditions up to 1200°C.