Dense self-bonded silicon carbide, prepared by impregnating with silicon pressed mixtures of silicon carbide and graphite, has been improved by attention to grading and composition. Treatment at 2000°C for ½ h has given a much greater degree of self-bonding. Porous self-bonded silicon carbide with a dense surface has also been prepared.
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References
1.
AlliegroR. A., CoffinL. B., and TinkelpaughJ. R., J. Amer. Ceram. Soc., 1956, 39, 386.
2.
PopperP., “Proceedings of the VIIth International Ceramic Congress” (1960), to be published.
3.
U.S. Patent, No. 1, 266 478, 1918.
4.
PopperP., “Special Ceramics”, p. 209. 1960: London (Heywood); also British Patent No. 866,813, 1961.
5.
ArthurG., private communication.
6.
GrievesonP. and AleockC. B., “Special Ceramics” (edited by P. Popper), p. 183. 1960: London (Heywood).
7.
SaceR. I.and G. A. Slack, “Silicon Carbide” (edited by J. R. Connor and J. Smiltens), p. 24. 1969: London (Pergamon Press).
8.
NewmanR. C., Proc. Phys. Soc., 1960, 76, 993.
9.
KingeryW. D., “Ceramic Fabrication Processes”, p. 140. 1958: New York and London (John Wiley).
