The influence of grain boundary scattering of excited carriers in CoSi2/Si Schottky diodes has been investigated by measuring the infrared response of epitaxial and polycrystalline silicide films on Si(100). An improvement in the quantum efficiency of polycrystalline diodes has been observed for thick silicide films, indicating that carriers are scattered at the grain boundaries of the silicide. The polycrystalline diodes show a quantum efficiency twice that of epitaxial detectors. The Schottky barrier height has been measured by different methods, and a difference of only a few meV is observed between the polycrystalline and the epitaxial diodes.
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