Abstract
The temperature variations of the AlInAs photoluminescence (PL) transition energies and the AlInAs/InP interface staggered lineup luminescence (SLL) energy are reported. The S shape appearing from 4 to 90 K on the energy v. temperature curves of these PL energies are owing to extrinsic recombinations. In particular, the S shape of the SLL energy curve v. temperature is probably a result of acceptor impurities localised in AlInAs at the interface (on edge impurities). The band offsets were determined by solving the Schrödinger and Poisson equations with a self consistent calculation program. At 4.5 K, the conduction and valence band offsets are 0.384 and 0.295 eV respectively. Their temperature variation is shown to be important: 35 and 23 meV at 4.5 and 300 K respectively. The Van Vechten and Malloy model (following a thermodynamic approach) for the temperature variation of the band offsets is compared to the results in the present work.
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