Sage Journals: Discover world-class research

Abstract

A structural and optical study of GaInAs/GaAs heterostructures grown by molecular beam epitaxy on {100}, {311}, and {211} oriented GaAs substrates is reported. The structural analysis by X-ray diffraction reveals the presence of shear strain in the {311} structures and an anisotropic onset of the relaxation behaviour in this orientation. The presence of strain induced piezoelectric fields modifies not only the optical transition energies, but it also reduces the excitonic binding energies.

Get full access to this article

View all access options for this article.

References

ANAN

, NISHI

, and SUGOU

: Appl. Phys. Lett., 1992, 60, 3159–3161.

NÔTZEL

, LEDENTSOV

N. N.

, DÄNVERITZ

, HOHENSTEIN

, and PLOOG

: Phys. Rev. Lett., 1991, 67, 3812–3815.

MAILIIIOT

and SMITII

D. L.

: Cryst. Prop. Prep., 1989, 21, 1 28.

ILG

and PLOOG

K. H.

: Phys. Rev. B, 1993, 48, 11512–11515.

MADELUNG

(ed.): Tandolt—Börnstein numerical data and functional relationships in science and technology’,Vol. 17a; 1982, Berlin, Springer Verlag.

HOGG

R. A.

et al.: Phys. Rev. B, 1993, 48, 8491 8494.

MOORE

K. J.

, DUGGAN

, WOODURIDGE

, and ROBERTS

: Phys. Rev. B, 1990, 41, 1090–1094.

LEAVITT

R. P.

and LITTLE

J. W.

: Phys. Rev. B, 1990, 42, 11774–11783.

GIBB

and ROTH

A. P.

: Solid State Commun., 1991, 80, 811–815.

Structural and optical investigation of GalnAs/GaAs {h 11} structures grown by molecular beam epitaxy

Abstract

Get full access to this article

References