Etching with Ar+ ions and SiCl4 reactive ion etching (RIE) of p type 2–3 ω cm resistivity Si (100) substrates was characterised using photorefiectance (PR), Rutherford backscattering spectrometry, and spectroscopic ellipsometry. Isochronal (5 min) etching was performed at various dc etch biases (0–500 V). A distinct modification to the λ3–λ1 Si transition of the room temperature PR spectra was observed as a function of etch bias for both etching modes. It was found that the PR response is sensitive to both the degree and nature of the ion bombardment.
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