Theoretical models and experimental data on plastic relaxation are reviewed. It is concluded that neither equilibrium nor kinetic effects are responsible for the relaxation observed under conditions of high growth quality in III-V epitaxy; instead dislocation multiplication mechanisms and the space they require to operate constitute the determining factor. Residual strain is then given by ɛ(h)= (0·8;± 0·1 nm)/h for a layer of thickness h. Deviationsfrom this rule are indicative of poor crystallinity. Silicon–germanium and II-VI materials are briefly discussed.
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References
1.
FRANKF. C. and J.H.Hder MERWE: Proc. R. Soc. (London) A, 1949, 198, 216.
2.
MATTHEWSJ. W. and BLAKEsLEEA. D.: J. Cryst. Growth, 1974, 27, 118.
3.
DODSONB. W. and TSAOJ. Y.: Appl. Phys. Lett., 1987, 51, 1325.
4.
FITZGERALDE. A.: Mater. Sci. Rep., 1991, 7, 87.
5.
DOWNESJ. R., DUNSTAND. J., and FAUXD. A.: SeMiCOnd. Sci. Technol., 1994, 9, 1265.
6.
COTTRELLA. IL: ‘Dislocations and plastic flow in crystals’; 1953, Oxford, Clarendon Press.
7.
BEANLANDR.: J. Appl. Phys., 1992, 72, 4031.
8.
FREUNDL. B.: J. Appl. Phys., 1990, 68, 2073.
9.
sumwoK.: in ‘Handbook of semiconductors’, (ed. MossT. S. and MahajanS., Vol. 3a,chap. 2;1994, Amsterdam, North-Holland.
BEANLANDR., DUNSTAND. J., and GOODHEWP. J.: J. Scanning Microsc., 1994, 8, 859.
16.
DUNSTAND. J., KIDDP., HOWARDL. K., and DIXONR. H.: Appl. Phys. Lett., 1991, 59, 3390.
17.
HOWARDL. K., KIDDP., and DIXONR. H.: J. Cryst. Growth, 1992, 125, 281.
18.
DUNSTAND. J., KIDDP., FEWSTERP. F., ANDREWN. L., GREYR., DAVIDJ. P. R., GONZALEZL., GONZALEZY., SACEDONA., and GONZALEZ-SANZF.: Appl. Phys. Lett., 1994, 65, 839–841.
19.
DUNSTAND. J., DIXONR. H., KIDDP., HOWARDL. K., WILKINSONV. A., LAMBIUNJ. D., JEYNESC., HALSALLM. P., LANCEFIELDD., EMENYM. T., GOODHEWP. J., K. P. HOMEWOOD, B. J. SEALY, and ADAMSA. R.:J. Cryst. Growth, 1993, 126, 589.
20.
HIGGSV., KIGHTLEYP., AUGUSTUSP. D., and GOODHEWP. J.: Appl. Phys. Lett., 1993, 59, 829.
LAZZARIJ. L., FOUILLANTC., GRUNBERGP., LECLERCQJ. L., JouLLItA., and SCHILLERC.: J. Cryst. Growth, 1993, 130, 96.
24.
GIANNINIC., TAPFERL., PELUSOT., LOVERGINEN., and VASANELLIL.: in Proc. 2nd European Symp. on ‘X-ray topography and high resolution diffraction’, Berlin, 1994.
25.
DUNSTAND. J.: Philos. Mag. A, in press.
26.
LERSOFFJ.: Appl. Phys. Lett., 1993, 62, 693.
27.
FITZGERALDE. A., XIEY. H., GREENM. L., BRASEND., KORTANA. R., MICHELJ., AntY. J., and WEIRB. E.: Appl. Phys. Lett., 1991, 59, 811.
28.
TUPPENC. G., GIBBINGSC. J., and HOCICLYM.: in MRS Symp. Proc. Vol. 220, 187; 1991, Pittsburgh, PA, Materials Research Society.
