Prospects for δ like confinement of impurities in GaAs: Ultrahigh density incorporation and generation of quantum wires and quantum dots by selforganised growth

Abstract

Several new aspects of δ5 like confinement ofisoelectronic and dopant impurities in (001) GaAs by molecular beam epitaxy are reviewed. Nucleation, redistribution, and relaxation are the important processes for structural perfection and hence for the resulting electronic properties for both the generation of quantum dots and wires by selforganised growth and the high density incorporation up to one monolayer. The fabrication and properties of InAs quantum wires and dots and Si doping wires in GaAs, and of Si δ5 doped GaAs with highly improved free carrier density are discussed in detail. The most important result is that impurity species must be deposited not continuously but in pulses to ensure ordered incorporation on lattice sites along step edges.

MST/3298