Abstract
Low pressure chemical vapour deposition was used to deposit selectively single SiGe layers and multiple quantum well dots and wires on (001) Sit The influence of the area of the selectively grown pads on growth rate and composition of Si1−xGex is presented. No change of growth rate or Gefraction in SiGe layers was observedfor decreasing pad sizes down to 0·5 μm. The retardation of relaxation of Si1 − xGex on Si on decreasing the pad size is presentedfor x =0·12, 0·16, and 0·20. Thefacet formation is discussed for <100> and <110> sidewall orientations on (001) substrates and growth rates for Si1−x Gex on {110} facet planes are given. Finally, the intense photoluminescence from submicrometre dots with SiGe/Si multiple quantum wells is discussed.
MST/3291
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