A possible new technique for metallisations in Si microelectronics technology has been prepared and characterised. Bilayers of TiNx/Ti were deposited by sputtering over a Si substrate. The samples were annealed in a rapid thermal processing system, and further analysed using Auger electron spectroscopy and electrical measurements (Schottky barrier height and sheet resistance). Significant differences from the more usual silicidiltion process of a Ti/Si structure have been observed. The silicidation process of the TiNx/Ti structures is mainly controlled by the presence of the intermediate TiN layer. The final structure was determined to be Si/TiSix/TiNy/TiSiz.
MST/3336
Get full access to this article
View all access options for this article.
References
1.
MURARKAS. P.: in ‘Silicides for VLSI applications’; 1983, New York, Academic Press.
2.
HOV. Q. and POULIND.: J. Vac. Sri. Technol. A, 1987, 5, 1396–1401.
3.
VADJIKARR. M., ROBERGER. P., and WOLFET. G.: J. Electrochem. Soc., 1988, 135, 2582–2586.
4.
YOSHIDAT., OGAWAS., OKUDAS., KOUZAKIT., and TSUKAMOTOK.: J. Electrochein. Soc., 1990, 137, 1914–1918.
5.
WILLEMSENH. F. C., KUIPERA. E. T., READERA. H., HOKKER., and BARBOURJ. C.: J. Vac. Sri. Technol. B, 1988, 6, 53–61.
6.
WITTMERM. and MELCHIORH.: Thin Solid Films, 1982, 93, 397–405.
7.
WITTMERM.: J. Vac. Sci. Technol. A, 1985, 3, 1797–1803.
8.
DAWSONP. T. and TZATZOVK. K.: Surf Sci., 1985, 149, 105–118.
