A modified version of the binary collision computer code Marlowe that can deal with low energy implant simulations is presented. In this version the trajectories of the particles are calculated by numerically solving their equations of motion instead of simply using the asymptotes, which is the usual approach. The model has been applied to the simulation of 0·5 keV boron implants into amorphous and crystalline silicon. The agreement with the experimental secondary ion mass spectrometry profiles is better than that obtained using the asymptotic approximation.
MST/3302
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