It is demonstrated that a resolution of deep level transient spectroscopy (D LTS) can be improved using the Laplace transform method for the emission rate analysis. Considerable confidence in this approach was gained through numerous tests carried out on two numerical algorithms used for the calculations as well as through measurements of a selection of well characterised point defects in various semiconductors. For each of these defects conventional DLTS gives broad featureless lines, whereas Laplace DLTS reveals afine structure in the emission process producing the spectra.
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