Abstract
The optical properties of low pressure chemical vapour deposited semi-insulating polysilicon oxygen doped silicon (SIPOS) thin films are characterised, using both in situ single wavelength (633 nm) ellipsometry with plasma etching and variable angle spectroscopic ellipsometry, as afunction of deposition and annealing conditions. Precise optical models for thin.film SIPOS are developed. Microstructural and chemical analysis is presented using cross-sectional transmission electron microscopy and secondary ion mass spectrometry.
MST/3252
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