Defect microstructures within heteroepitaxiallayers are categorised according to whether they result from an inherent materials problem, are due to problems at the epilayer/substrate interface, are introduced during growth itself, or are formed during postgrowth processing. Examples are presented which include dimorphism in CdS/GaAs, twinning in epitaxial CdTe, interfacial misfit dislocationformation in ZnTe/GaAs, and interfacial phaseformation in (Cd,Zn)S/GaAs. It isfound that the development of (In, Ga)(As,P) based infrared multiple quantum well lasers grown by chemical beam epitaxy (CBE) is hindered by the limited control of the quaternary composition, as compared with gas source molecular beam epitaxy material. The use of growth interrupts to characterise gas switching procedures in CBE (In, Ga)( As,P) is described. Relaxation initiation of molecular beam epitaxy SiGe/Si structures is associated with the presence of transition metal impurities. Surface profile imaging used to investigate the first stages of defectformation is described with reference to the problem of micro twinning.
ZHANGX., PASHLEYD. W., NEAVEJ. H., FAWCETTP. N., ZHANGJ., and JOYCEB. A.: J. Cryst. Growth, 1993, 132, 331–334.
3.
TAKEUCHIS., SUZUKIK., MAEDAK., and IWANAGAH.: Philos. Mag., 1984, A50, 171-178.
4.
HAILSJ. E., RUSSELLG. J., BROWNP. D., BRINKMANA. W., and woonsJ.: J. Cryst. Growth, 1988, 86, 516–521.
5.
MULLINSJ. T., CLIFTONP. A., BROWNP. D., BRINKMANA. W., and WOODSJ.: J. Cryst. Growth, 1990, 101, 100–104.
6.
CLIFTONP. A., MULLINSJ. T., BROWNP. D., LOVERGINEN., BRINKMANA. W., and WOODSJ.: J. Cryst. Growth, 1990, 99, 468–472.
7.
ALLAKH. M. AL, BRINKMANA. W.CLIFTONP. A., and BROWNP. D.: in MRS Symp. Proc. Tong-wavelength semiconductor devices, materials, and processes’,35–40; 1991, Pittsburgh, PA,>Materials Research Society.
8.
KAWAKAMIY., TAGUCHIT., and HIRAKEA.J. Vac. Sci. Technol.,1987, B5, 1171-1178.
9.
GOLDINGT. D., QADRIS. B., and DINANJ. H.: J. Vac. Sci. Technol., 1989, A7, 616-620.
10.
HAUKSSONI. S., WANGS. Y., SIMPSONJ., TAGHIZADEHM. R., PRIORK. A., and CAVENETTB. C.: Physica, 1993, B191, 124-129.
11.
SMITHD. W., EMELEUSC. J., KUBIAKR. A., PARKERE. H. C., and WHALLT. E.: Appl. Phys. Lett.,1992, 61, 1453–1455.
12.
DAVIESG. J., SKEVINGTONP. J., SCOTTE. G., FRENCHC. L., and FOORDJ. S.: J. Cryst. Growth, 1991, 107, 999–1008.
13.
CHEWN. and CULLISA, G.: Ultramicroscopy, 1987, 23, 175–198.
14.
GOODHEWP. J. and CASTLEJ. E.: Inst. Phys. Conf. Ser.,1983, 68, 515–522.
15.
HETHERINGTONC. J. D.: in MRS Symp. Proc. ‘High resolution electron microscopy of defects in materials’, 123-134; 1990, Pittsburgh, PA, Materials Research Society.
16.
BROWNP. D., LOGINOVY. Y., MULLINSJ. T., DUROSEK., BRINKMANA. W., and HUMPHREYSC. J.: J. Cryst. Growth, 1994, 138, 538–544.
17.
ANNOH., KOYANASIT., and MATSUBARAK.: J. Cryst. Growth, 1992, 117, 816–819.
18.
BROWNP. D., HAILSJ. E., RUSSELLG. J., and WOODSJ.: Appl. Phys. Lett.,1989, 50, 1144–1145.
19.
DUROSEK. and RUSSELLG. J.: J. Cryst. Growth, 1990, 101, 246–250.
20.
BROWNP. D., HAILSJ. E., RUSSELLG. J., and WOODSJ.: J. Cryst. Growth, 1988, 86, 511–515.
21.
BAXTERC. S., STOBBSW. M., and WILKIEJ. H.: J. Cryst. Growth, 1991, 112, 373–385.
HETHERINGTONC. J. D., BARRYJ. C., BIJ. M., HUMPHREYSC. J., GRANGEJ., and wooDc.: in MRS Symp. Proc. layered struc-tures, epitaxy and interfaces’, 41-46; 1985, Pittsburgh, PA, Materials Research Society.
35.
DAVIESG. J., HECKINGBOTTOMR., OHNOH., WOODC. E. C., and CALAWAA R.: Appl. Phys. Lett.,1980, 37, 290–292.
36.
JUSSERANDB., ALEXANDREJ., PAQUETD., and Le ROUXG.: Appl. Phys. Lett.,1985, 47, 301–303.
37.
BROWNP. D., BITHELLE. G., HUMPHREYSC. J., SICEVINGTONP. J., CANNARDP. J., and DAVIESG. J.: Inst. Phys. Conf. Ser.,1993, 134, 373–376.
38.
TUNNICLIFFEJ., IRVINES. J. C., DOSSERO. D., and MULLINJ. B.: J. Cryst. Growth, 1984, 68, 245–253.
39.
CHENGT. T., AINDOWM., JONESI. P., HAILSJ. E., WILLIAMSD. J., and ASTLESM. G.: J. Cryst. Growth, 1994, 135, 409–422.
40.
UEDAO.: J. Electrochetn. Soc., 1988, 135, 11C-22C.
