The effect of the addition of 1 mol.-%MgO, BeO, or Y2O3 on the dielectric behaviour of hot pressed AlN ceramic was studied in the temperature range 300–1000 K. It was observed that the dielectric constant and dielectric loss increase appreciably at all temperatures when these oxides are added to AlN. The effect of moisture on the dielectric behaviour was also studied for all the samples. It was observed that addition of the oxides increases the moisture absorption in pure AlN ceramic.
MST/924
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References
1.
DEWITHG. and HATTUN.: J. Mater. Sci., 1983, 18, 503.
2.
TAYLORK. M. and LENIEc.: J. Electrochem. Soc.,1960, 107, 308.
3.
SAKAIT. and IWATAM.: J. Mater. Sci., 1977, 12, 1659.
4.
SPIVAKI. I. and RYSTSONV. N.: Sov. Powder Metall. Met. Ceram.,1976, 15, 143.
