Interstitial loops introduced into Zn or Cd by electron irradiation at room temperature have been examined at voltages below the threshold voltage for damage, at temperatures down to about −130°C. Loops which consist of two concentric c/2 loops, separated by ∼ 400 Å during growth, facet during this observation at low temperatures and concentric 〈c/2 + p〉 + 〈c/2 − p〉 loops behave in a qualitatively similar way. The faceting is reversible on cycling the specimens between a nominal temperature of about −130°C and room temperature. These observations are discussed in terms of vacancy-induced climb.
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