Theoretical analyses of dislocation-loop annealing are reviewed; diffusion and climb models of the process are shown to predict the same annealing rate when appropriate assumptions are made regarding the vacancy source. The diffusion model is extended to take account of elastic interaction between a vacancy and a dislocation line. In most practical cases this interaction causes only a slight increase in the annealing rate. General equations are derived for the rates of change in radii of small and large loops lying on basal planes in thin foils of hexagonal metals.
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