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Abstract

The point defect diagrams in non-stoichiometric titanium (IV) oxide TiO_2−δ, pure and doped with M³⁺ and M⁵⁺ metal ions, are presented in this work. A new method was used for the calculations of the diagrams. This method is based on derived relations between standard Gibbs energy of formation of oxygen vacancies and interstitial cations, intrinsic ionic and electronic defects and oxygen pressure at which the oxide has stoichiometric composition, and it uses experimental values of deviation from the stoichiometry. The calculations were performed using the results of studies obtained by many authors in the temperature range of 1073–1573 K.

Keywords

Electronic materials Titanium (IV) oxide Defects theory Diagram of point defects Schottky defects

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Point defect diagrams for pure and doped titanium (IV) oxide TiO 2− δ in temperature range of 1073–1573 K

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