Abstract
Gallium oxide nanowires have been prepared on Si(100) substrates using metallo-organic chemical vapour deposition. Growth behaviour has been investigated with various deposition times and the structural morphologies of the nanowires have been studied. The thickness and surface coverage ratio of the deposits increased with increasing deposition time. The gallium oxide nanowires were amorphous phase, having a circular cross-section with diameter of about 50–250 nm.
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