Abstract
ZnSe thin films were prepared on transparent indium tin oxide (ITO) glasses by electrodeposition at 70°C. Linear sweep voltammograms were performed to get details about electrochemical reactions on indium tin oxide substrate. Deposition mechanism was discussed in conditions of static electrolytes and stirring ones. The results indicated that the catalysis of H2Se on surface of ITO glass has accelerated Se(0) accumulation which restrained Zn2+ ions diffusion into lattice position. Cubic ZnSe films could only be obtained at −900 mV from stirring solution. Mechanical agitation excitated the reaction of Zn2+ ions with reduced Se species, which decreased Se(0) accumulation onto the solid electrode.
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