Memory switching characteristics in amorphous ZnIn 2 Se 4 thin films

Abstract

ZnIn₂Se₄ thin films were deposited by flash evaporation of bulk material onto glass and pyrographite substrates under vacuum. The surface aspects of films have been studied by scanning electron microscopy. The dynamic and static current (I) versus voltage (V) characteristics of brass/pyrographite/ZnIn₂Se₄ thin film/platinum sandwiched devices for different film thicknesses (350–650 nm) and temperatures (313–353 K) were measured. The OFF state I–V characteristics of fabricated thin film devices indicated that the conduction mechanism is of the Poole–Frenkel type. In addition, a threshold memory switching mechanism from a high resistance OFF state to a low resistance ON state was observed in these thin film structures. The I–V characteristics of the memory device were studied at different annealed and ambient temperatures. The threshold voltage was found to increase linearly with film thickness and decrease exponentially with ambient temperature. The results obtained were discussed, and a thermal model for initiating the switching process in this device system could be indicated.

Keywords

Annealing Switching characteristics Threshold voltage Memory Switching

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References

Surinach

, Baro

, Clavaguera-Mora

and Clavaguera

: ‘Kinetic study of isothermal and continuous heating crystallization in GeSe₂, GeTe, Sb₂Te₃ alloy glasses’, J. Non-Cryst. Solids, 1983, 58, 209–217.

Lokesh

, Udayashankar

and Asokan

: ‘Electrical switching behaviour of bulk Si₁₅Te_85-xSb_x chalcogenide glasses-a study of compositional dependence’, J. Non-Cryst. Solids, 2010, 356, 321–325.

Ovshinsky SR and Fritzsche

: ‘Reversible structural transformations in amorphous semiconductors for memory and logic’, Metall. Trans., 1971, 2, 641–645.

Babu

, Reddy

, Revathi

and Reddy

KTR

: ‘Effect of pH on the physical properties of ZnIn₂Se₄ thin films grown by chemical bath deposition’, J. Nano-Electron. Phys., 2011, 3, 85–91.

Papandreou

, Pantazi

, Sebastian

, Eleftheriou

, Breitwisch

, Lam

and Pozidis

: ‘Estimation of amorphous fraction in multilevel phase-change memory cells’, Solid-State Electron., 2010, 54, 991–996.

Kozyukhin

, Popov

and Voronkov

: ‘Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory’, Thin Solid Films, 2010, 518, 5656–5658.

Dhruv

and Patel

: ‘Growth of flash evaporated ZnIn₂Se₄ thin films’, Int. J. Appl. Sci. Eng. Res., 2014, 3, 121–128.

Hendia

and Soliman

: ‘Optical absorption behaviour of evaporated ZnIn₂Se₄ thin films’, Thin Solid Films, 1995, 261, 322–327.

Soliman

and Zayed

: ‘Electrical and switching properties of ZnIn₂Se₄ amorphous thin films’, Fizika A, 1996, 5A, 197–204.

10.

Wlodarski

, Nowicki

and Pekalska

: ‘Pyrographite-coated cuvettes and pyrographite cuvettes for the atomic-absorption spectroscopy’, Przemysl Chemiczny, 1993, 72, 127–135.

11.

Jun

, Cho

, Yun

and Kim

: ‘Switching memory cells constructed on plastic substrates with silver selenide nanoparticles’, J. Mater. Sci., 2011, 46, 6767–6771.

12.

Afifi

, Hegab

, Atyia

and Farid

: ‘Investigation of DC conductivity and switching phenomenon of Se₈₀Te_20-xGe_x amorphous system’, J. Alloys Compd, 2008, 463, 10–17.

13.

Kenawy

, El-Shazly

, Afifi

, Zayed

and El-Zahid

: ‘Electrical and switching properites of InSe amorphous thin films’, Thin Solid Films, 1991, 200, 203–210.

14.

Yahia

, Fadel

, Sakr

and Shenouda

: ‘Memory switching of ZnGa₂Se₄ thin films as a new material for phase change memories (PCMs)’, J. Alloys Compd, 2010, 507, 551–556.

15.

Lelmini

and Zhang

: ‘Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices’, J. Appl. Phys., 2007, 102, 54517.

16.

Kaplan

and Adler

: ‘Electrothermal switching in amorphous semiconductors’, J. Non-Cryst. Solids, 1972, 8, 538–543.

17.

Abou El-Hassan

and Khoder

: ‘Investigation of switching and DC conductivity on some vanadium phosphate tellurite oxide glasses’, Phys. Status Solidi A, 2001, 186A, 401–413.

18.

Sakr

, Fouad

, Yahia

and Abdel Basset

: ‘Memory switching of ZnGa₂Te₄ thin films’, J. Mater. Sci., 2013, 48, 1134–1140.

19.

Abdel-Aziz

: ‘Memory switching of germanium tellurium amorphous semiconductor’, Appl. Surf. Sci., 2006, 253, 2059–2065.