Effects of bias on properties of Ti–C: H films coated by filtered cathodic vacuum arc

Abstract

A bias voltage apparatus is attached to the filtered cathode vacuum arc system for coating a diamond-like film containing Ti on WC substrate. Ti, which acts as the cathode target, is sputtered by plasma, and reacts with C₂H₂ gas, then deposits on the WC under working conditions of 60 A current and voltage between −50 and −275 V. Such processed diamond-like film containing Ti(Ti–C:H) is analysed by glow discharge spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy and nanoindentation for determining Ti concentration, crystallographic structure, bonding mode and mechanical properties. Characteristic parameters are determined to obtain suitable properties, and the underlying reasons are also addressed.